EEPW首页| 器件索引| 厂商列表| IC替换| 微缩略语| 电路图查询
器件查询:
400万器件资料库等您来搜!
首页>SAVANTIC> 2SD1159

2SD1159

器件名称: 2SD1159
功能描述: Silicon NPN Power Transistors
文件大小: 151.83KB 共4页
生产厂商: SAVANTIC
下  载: 在线浏览点击下载
简  介: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1159 DESCRIPTION With TO-220 package APPLICATIONS TV horizontal deflection output, High-current switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 200 60 6 4.5 10 40 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=5mA ;RBE=: IC=5mA ;IE=0 IE=5mA ;IC=0 IC=4A, IB=0.4A IC=4A, IB=0.4A VCB=40V;IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=4A ; VCE=5V IC=1A ; VCE=5V 30 25 10 MIN 60 200 6 2SD1159 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V V V 0.5 1.0 1.5 0.1 0.1 160 V V mA mA MHz Switching times tf Fall time IC=5A;IB1=-IB2=0.5A; VCC=50V 0.2 0.5 s 2 SavantIC Semiconductor Product Sp……
相关电子器件
器件名 功能描述 生产厂商
2SD1159 Silicon NPN Power Transistors ISC
2SD1159 Silicon NPN Power Transistors SAVANTIC
2SD1159 TV Horizontal Deflection Output, High-Current Switching Applications SANYO
《电子产品世界》杂志社 版权所有 北京东晓国际技术信息咨询有限公司
Copyright ©2002 ELECTRONIC ENGINEERING & PRODUCT WORLD. All rights reserved.
京ICP备12027778号-2