器件名称:
2SD1163
功能描述:
Silicon NPN Power Transistors
文件大小:
123.95KB 共3页
简 介:
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1163 DESCRIPTION Collector Current: IC= 7A Collector-Emitter BreakdownVoltage: V(BR)CEO= 120V(Min.) APPLICATIONS Designed for TV horizontal deflection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IC(surge) Collector Current-Surge Total Power Dissipation @ TC=25℃ Junction Temperature 20 A PC 40 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1163 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; RBE= ∞ 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA ; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.2 V ICBO Collector Cutoff Current VCB= 300V ; IE= 0 5 mA hFE DC Current Gain IC= 5A ; VCE= 5V 25 tf Fall Time ICP= 3.5A; IB1= 0.45A 0.5 μs isc Website：www.iscsemi.cn 2 ……
