器件名称:
2SD1210
功能描述:
Silicon NPN Darlington Power Transistor
文件大小:
232.96KB 共2页
简 介:
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1210 DESCRIPTION High DC Current Gain : hFE= 1000(Min.)@ IC= 10A Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V(Min) APPLICATIONS Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w ww s c s .i VALUE 150 V 100 V 8 V 10 A 20 A 1 A UNIT n c . i m e ICM Collector Current-Peak IB B Base Current- Continuous Collector Power Dissipation @Ta=25℃ 3 W PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 80 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD1210 MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 10A, IB= 25mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A, IB= 25mA 2.0 V ICBO Collector Cutoff current VCB= 100V, IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 8V; IC= 0 5 mA hFE DC Current Gain IC= 10A; VCE= 2V 1000 Switching Times ton Turn-On Time tstg Storage Time tf Fall Time w w s c s i . w IC = 10A,IB1 = -IB2= 25mA; RL= 5Ω;VCC≈ 50V n c . i m e 1……
