器件名称:
2SD1213
功能描述:
Silicon NPN Power Transistors
文件大小:
133.2KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1213 DESCRIPTION ·With TO-3PN package ·Low collector saturation voltage ·Large current capacity. ·Complement to type 2SB904 APPLICATIONS ·Large current switching of relay drivers, high-speed inverters, converters. PINNING PIN 1 2 3 Base Collector;connected to mounting base Fig.1 simplified outline (TO-3PN) and symbol Emitter DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER 固电 体 导 半 INC Collector-base voltage Collector-emitter voltage EM S E G N A H Open base D N O IC CONDITIONS R O T UC VALUE 60 30 6 20 30 UNIT V V V A A Open emitter Emitter-base voltage Collector current (DC) Collector current (Pulse) Open collector TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 60 W 2.5 150 -55~150 ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=1mA ;RBE=∞ IC=1mA; IE=0 IE=1mA; IC=0 IC=8A; IB=0.4A VCB=40V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=2V IC=10A ; VCE=2V IC=1A ; VCE=5V 70 30 MIN 30 60 6 2SD1213 TYP. MAX U……
