器件名称:
2SD1229
功能描述:
Silicon NPN Power Transistors
文件大小:
133.38KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1229 DESCRIPTION With TO-3PN package Complement to type 2SB912 High DC current gain High current capacity and wide ASO Low saturation voltage APPLICATIONS Motor drivers, printer hammer drivers, relay drivers,voltage regulator control. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2.5 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector MAX 70 60 6 10 15 60 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=50mA ;RBE=∞ IC=5mA ;IE=0 IC=5A ;IB=10mA IC=5A ;IB=10mA VCB=40V; IE=0 VEB=5V; IC=0 IC=5A ; VCE=2V IC=5A ; VCE=5V 2000 MIN 60 70 2SD1229 TYP. MAX UNIT V V 1.5 2.0 0.1 3.0 V V mA mA 20 MHz Switching times Turn-on time Storage time F……
