器件名称:
2SD1230
功能描述:
Silicon NPN Darlington Power Transistor
文件大小:
235.64KB 共2页
简 介:
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1230 DESCRIPTION High DC Current Gain : hFE= 1500(Min.)@ IC= 4A, VCE= 3V Collector-Emitter Breakdown Voltage: V(BR)CEO = 100V(Min.) Complement to Type 2SB913 APPLICATIONS Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w s c s i . w VALUE 110 V 100 V 6 V 8 A 12 A 2.5 W UNIT n c . i m e IC Collector Current-Continuous ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 60 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCE(sat) VBE(sat) ICBO IEBO fT hFE PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff current Emitter Cutoff Current Current-Gain—Bandwidth Product DC Current Gain CONDITIONS IC= 50mA; RBE= ∞ IC= 5mA; IE= 0 IC= 4A, IB= 8mA B 2SD1230 MIN 100 110 TYP. MAX UNIT V V 1.5 2.0 0.1 3.0 20 V V mA mA MHz IC= 4A, IB= 8mA B VCB= 80V, IE= 0 Switching Times ton ……
