器件名称:
2SD1233
功能描述:
Silicon NPN Darlington Power Transistor
文件大小:
207.38KB 共2页
简 介:
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1233 DESCRIPTION High DC Current Gain : hFE= 1500(Min.)@ IC= 4A, VCE= 3V Collector-Emitter Breakdown Voltage: V(BR)CEO = 100V(Min.) APPLICATIONS Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w s c s i . w VALUE 110 100 6 8 12 70 UNIT n c . i m e V V V A A IC Collector Current-Continuous ICM Collector Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature PC W Tj 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1233 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ 100 V V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 110 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A, IB= 8mA B 1.5 V VBE(sat) ICBO Base-Emitter Saturation Voltage IC= 4A, IB= 8mA B 2.0 V Collector Cutoff current VCB= 80V, IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 fT Current-Gain—Bandwidth Product hFE DC Current Gain Switching Times ton Turn-On Time tstg Storage Time w ……
