器件名称: 2SD1235
功能描述: Silicon NPN Power Transistors
文件大小: 116.9KB 共4页
简 介:Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1235
DESCRIPTION With TO-220C package Complement to type 2SB919 Low collector saturation voltage Large current capacity. APPLICATIONS Large current switching of relay drivers, high-speed inverters,converters
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak TC=25℃ PC Collector dissipation 1.75 Tj Tstg Junction temperature Storage temperature 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE 60 30 6 8 15 30 W UNIT V V V A A
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=1mA ;RBE=∞ IC=1mA ;IE=0 IE=1mA; IC=0 IC=3A; IB=0.15A VCB=40V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=2V IC=4A ; VCE=2V IC=1A ; VCE=5V 70 30 MIN 30 60 6
2SD1235
TYP.
MAX
UNIT V V V
0.4 100 100 280
V μA μA
120
MHz
Switching times ton ts tf Turn-on time Storage time Fall time IC=20IB1=-20IB2=……
