器件名称:
2SD1238L
功能描述:
Silicon NPN Power Transistors
文件大小:
197.57KB 共4页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1238L DESCRIPTION With TO-3PN package Low collector saturation voltage Wide area of safe operation Complement to type 2SB922L APPLICATIONS Suitable for relay drivers, high-speed inverters,converters, and other largecurrent switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 90 80 6 12 20 80 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=1mA ;RBE=∞ IC=1mA; IE=0 IE=1mA; IC=0 IC=6A; IB=0.6A VCB=80V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=2V IC=6A ; VCE=2V IC=1A ; VCE=5V 70 30 MIN 80 90 6 2SD1238L TYP. MAX UNIT V V V 0.4 0.1 0.1 280 V mA mA 20 ……
