器件名称:
2SD1275A
功能描述:
Silicon NPN Power Transistors
文件大小:
131.13KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1275 2SD1275A DESCRIPTION ·With TO-220Fa package ·Complement to type 2SB949/949A ·High DC current gain ·High-speed switching APPLICATIONS ·For power amplification PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL 固电 体 导 半 PARAMETER VCBO VCEO INC Collector-base voltage EM S E G N A H 2SD1275 2SD1275A 2SD1275 Open base 2SD1275A D N O IC CONDITIONS R O T UC VALUE 60 80 60 UNIT Open emitter V Collector-emitter voltage V 80 VEBO IC ICM Emitter-base voltage Collector current Collector current-Peak Open collector 5 2 4 V A A TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 35 W 2 150 -55~150 ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SD1275 IC=30mA , IB=0 2SD1275A VCEsat VBE Collector-emitter saturation voltage Base-emitter voltage 2SD1275 2SD1275A Collector ICEO cut-off current IEBO hFE-1 hFE-2 fT Emitter cut-off current 2SD1275A VCE=40V; IB=0 VEB=5V; IC=0 2SD1275 IC=2A; IB=8mA VCE=4V; IC=2A VCB=60V; IE=0 CONDITIONS 2SD1275 2SD1275A MIN 60 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 80 2.5 2.8 V V ICBO Collector cut-off current 1.0 VCB=80V; IE=0 VCE=30V; IB=0 2.0 mA mA 固电 IN DC current gain DC current gain 体……
