器件名称:
2SD1276
功能描述:
Silicon NPN Power Transistors
文件大小:
131.25KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1276 2SD1276A DESCRIPTION ·With TO-220Fa package ·Complement to type 2SB950/950A ·High DC current gain ·High-speed switching APPLICATIONS ·For power amplification PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL 固电 体 导 半 PARAMETER VCBO VCEO A H C IN Collector-base voltage EM S E NG 2SD1276 2SD1276A 2SD1276 2SD1276A D N O IC CONDITIONS R O T UC VALUE 60 80 60 UNIT Open emitter V Collector-emitter voltage Open base 80 Open collector 5 4 8 TC=25℃ 40 V VEBO IC ICM Emitter-base voltage Collector current (DC) Collector current-Peak V A A PC Collector power dissipation Ta=25℃ 2 150 -55~150 W Tj Tstg Junction temperature Storage temperature ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1276 2SD1276A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER Collector-emitter breakdown voltage 2SD1276 IC=30mA , IB=0 2SD1276A IC=3A ;IB=12mA IC=5A ;IB=20mA VCE=3V; IC=3A 2SD1276 2SD1276A 2SD1276 2SD1276A VCB=60V ;IE=0 0.2 VCB=80V; IE=0 VCE=30V; IB=0 0.5 VCE=40V; IB=0 VEB=5V; IC=0 mA mA 80 2 4 2.5 V V V CONDITIONS MIN 60 V TYP. MAX UNIT V(BR)CEO VCEsat-1 VCEsatVBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current ICBO ICEO Collector cut-off current Emitter cut-off curr……
