器件名称:
2SD1396
功能描述:
Silicon NPN Power Transistors
文件大小:
92.02KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1396 DESCRIPTION With TO-3PN package Built-in damper diode High voltage ,high reliability High speed switching APPLICATIONS For horizontal output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 7 2.5 10 80 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC=100mA; RBE=∞ MIN 2SD1396 TYP. MAX UNIT V(BR)CEO Collector- emitter breakdown voltage 800 V V(BR)CBO Collector-base breakdown voltage IC=5mA; IE=0 1500 V V(BR)EBO Emitter-base breakdown voltage IE=200mA; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.6A 8.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.6A 1.5 V μA ICBO Collector cut-off current VCB=800V; IE=0 10 IEBO Emitter cut-off current VEB=4V; IC=0 40 130 mA hFE DC current gain IC=0.5A ; VCE=5V 8 fT Transition frequency IC=0.5A ; VCE=10V IC=2A;IB1=0.6A; IB2……
