器件名称:
4MBI200T-060
功能描述:
IGBT Module
文件大小:
646.81KB 共14页
简 介:
SPECIFICATION Device Name Type Name Spec. No. : : : IGBT Module 4MBI200T-060 MS5F 05498 Fuji Electric Co.,Ltd. Matsumoto Factory Jun 16 ‘03 K.Muramatsu Jun 17 ‘03 T.Miyasaka T.Fujihira K.Yamada MS5F 05498 1 14 H04-004-07 Revised Records Date Classification Ind. Content Applied date Issued date Drawn Checked T.Miyasaka K.Yamada Approved Jun.-17-'03 enactment T.Fujihira MS5F 05498 2 14 H04-004-06 4MBI200T-060 1. Outline Drawing ( Unit : mm ) ( ) shows reference dimension. 2. Equivalent circuit [Inverter] 21,22 13 14 U 5,6 17 18 V 2,3 [Thermistor] 8 9 15 16 19 20 1,24 MS5F 05498 3 14 H04-004-03 3. Absolute Maximum Ratings ( at Tc= 25℃ unless otherwise specified ） Items Collector-Emitter voltage Gate-Emitter voltage Collector current Symbols VCES VGES Ic Ic pulse IF IF pulse Collector Power Dissipation Junction temperature Storage temperature Isolation voltage(*1) Pc Tj Tstg Viso (*2) Conditions Ic=1mA Duty=100 % 1ms Duty=50 % 1ms 1 device Maximum Ratings 600 ±20 200 400 200 400 540 150 -40~ +125 Units V V A W ℃ ℃ V Nm AC : 1min. 2500 3.5 Mounting Screw Torque (*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : Mounting 2.5~3.5 N m (M5) 4. Electrical characteristics ( at Tj= 25℃ unless otherwise specified) Items Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse tra……
