器件名称:
4MBI75T-060
功能描述:
IGBT Module
文件大小:
626.42KB 共14页
简 介:
SPECIFICATION Device Name Type Name Spec. No. : : : IGBT Module 4MBI75T-060 MS5F 5432 Fuji Electric Co.,Ltd. Matsumoto Factory Apr. 23 ’03 S.Ogawa Apr. 23 ’03 T.Miyasaka Apr. - 23 - ’03 K.Yamada T.Fujihira MS5F 5432 1 14 H04-004-07 a b c Revised Records Date Classification Ind. Content Applied date Issued date Drawn Checked T.Miyasaka K.Yamada Approved Apr. - 23- ’03 enactment T.Fujihira Oct. - 16- ’03 Revision a Added thermistor (P3/14, 4/14, 12/14) Y.Kobayashi T.Miyasaka K.Yamada Y.Seki Dec. - 10- ’03 Revision b Revised VCE(sat),VF (P4/14, 10/14, 12/14) Y.Kobayashi S.Miyashita K.Yamada Y.Seki Sep. - 07- ’04 Revision c Revised VF (P4/14, 12/14) Y.Kobayashi S.Miyashita K.Yamada Y.Seki MS5F 5432 2 14 H04-004-06 a b c 4MBI75T-060 1. Outline Drawing ( Unit : mm ) ( a ) shows reference dimension. 2. Equivalent circuit [Inverter] [Thermistor] 8 9 MS5F 5432 3 14 H04-004-03 a b c 3. Absolute Maximum Ratings ( at Tc= 25°C unless otherwise specified ） Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Ic Collector current Ic pulse IF IF pulse Pc Tj Tstg Duty=100 % 1ms Duty=50 % 1ms 1 device Conditions Ic=1mA Maximum Ratings 600 ±20 75 150 75 150 178 150 -40~ +125 2500 3.5 Units V V A Collector Power Dissipation Junction temperature Storage temperature a W °C °C V Nm Isolation between terminal and copper base *1 Viso AC : 1min. voltage between thermistor and others *2 Screw Mounting *3 Torque (*1) All terminals ……
