器件名称:
N02L6181AB8I
功能描述:
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit
文件大小:
636.48KB 共11页
简 介:
N02L6181A 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit Overview The N02L6181A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 131,072 words by 16 bits. The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The base design is the same as ON Semiconductor’s N02L63W3A, which is processed to operate at higher voltages. The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently. The N02L6181A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard packages compatible with other standard 128Kb x 16 SRAMs. Features Single Wide Power Supply Range 1.65 to 2.2 Volts Very low standby current 0.5A at 1.8V (Typical) Very low operating current 1.4mA at 1.8V and 1s (Typical) Very low Page Mode operating current 0.5mA at 1.8V and 1s (Typical) Simple memory control Single Chip Enable (CE) Byte control for independent byte operation Output Enable (OE) for memory expansion Low voltage data retention Vcc = 1.2V Very fast output enable access time 30ns OE access time Automatic power down to standby mode TTL compatible three-state output……
