器件名称:
2N111
功能描述:
Integrated N-Channel PowerTrench MOSFET and Schottky Diode
文件大小:
289.6KB 共7页
简 介:
FDFM2N111 Integrated N-Channel PowerTrench MOSFET and Schottky Diode August 2005 FDFM2N111 Integrated N-Channel PowerTrench MOSFET and Schottky Diode General Description FDFM2N111 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a MicroFET package. This device is designed specifically as a single package solution for Standard Buck Converter. It features a fast switching, low gate charge MOSFET with very low on-state resistance. Applications Standard Buck Converter Features 4 A, 20 V RDS(ON) = 100m @ VGS = 4.5 V RDS(ON) = 150m @ VGS = 2.5 V Low Profile - 0.8 mm maximun - in the new package MicroFET 3x3 mm PIN 1 A S/C G A 1 2 3 6 5 4 A S/C D C D S/C G A TOP MLP 3x3 S/C D BOTTOM Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID VRRM IO PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current -Continuous -Pulsed Schottky Repetitive Peak Reverse voltage Schottky Average Forward Current Power dissipation (Steady State) Power dissipation (Steady State) Operating and Storage Junction Temperature Range (Note 1a) (Note 1a) (Note 1b) (Note 1a) Ratings 20 ±12 4 10 20 2 1.7 0.8 -55 to +150 Units V V A V A W o C Thermal Characteristics RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 70 150 o C/W oC/W Package Marking and Ordering Information Device Marking 2N11……
