器件名称:
2N3055_08
功能描述:
Complementary power transistors
文件大小:
92.97KB 共7页
简 介:
2N3055 MJ2955 Complementary power transistors Features ■ ■ Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications ■ ■ General purpose Audio Amplifier 1 2 TO-3 Description The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. Figure 1. Internal schematic diagram Table 1. Device summary Marking 2N3055 TO-3 MJ2955 MJ2955 tray Package Packaging Order code 2N3055 January 2008 . Rev 7 1/7 www.st.com 7 Absolute maximun rating 2N3055 MJ2955 1 Table 2. Symbol Absolute maximun rating Absolute maximum rating Parameter NPN PNP VCBO VCER VCEO VEBO IC IB PTOT Tstg TJ Collector-emitter voltage (IE = 0) Collector-emitter voltage (RBE = 100 ) Collector-emitter voltage (IB = 0) Collector-base voltage (IC = 0) Collector current Base current Total dissipation at Tc ≤25°C Storage temperature Max. operating junction temperature For PNP type voltage and current values are negative Value 2N3055 MJ2955 100 70 60 7 15 7 115 -65 to 200 200 Unit V V V V A A W °C °C Note: 2/7 2N3055 MJ2955 Electrical characteristics 2 Electrical characteristics (Tcase = 25°C; unless otherwise specified) Table 3. Symbol ICEX ICEO IEBO Electrical characteristics Parameter Collector cut-off current (V BE = -1.5 V) Collector cut-off current (IB = 0) Emitter cut-off current (IC = 0) Test conditions VCE = 100 V VCE = 100 V VCE = 30 V VEB = 7 V IC = 200 mA IC = 200 mA IC = 4 A IC = 10 ……
