器件名称: 2N3055_MJ2955
功能描述: 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS
文件大小: 130.46KB 共4页
简 介:MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N3055/D
Complementary Silicon Power Transistors
. . . designed for general–purpose switching and amplifier applications. DC Current Gain — hFE = 20 – 70 @ IC = 4 Adc Collector–Emitter Saturation Voltage — VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc Excellent Safe Operating Area
2N3055 * PNP MJ2955 *
*Motorola Preferred Device
NPN
MAXIMUM RATINGS
Rating Symbol VCEO VCER VCB VEB IC IB Value 60 70 Unit Vdc Vdc Vdc Vdc Adc Adc Collector–Emitter Voltage Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage 100 7 Collector Current — Continuous Base Current 15 7 Total Power Dissipation @ TC = 25_C Derate above 25_C PD 115 0.657 Watts W/_C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 200
15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS
CASE 1–07 TO–204AA (TO–3)
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol RθJC
Max
Unit
Thermal Resistance, Junction to Case
1.52
_C/W
160 PD, POWER DISSIPATION (WATTS) 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) 175 200
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data
1
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