器件名称:
2N3055A_06
功能描述:
Complementary Silicon High-Power Transistors
文件大小:
89.38KB 共6页
简 介:
2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon HighPower Transistors These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dctodc converters, inverters, or for inductive loads requiring higher safe operating area than the 2N3055. Features http://onsemi.com CurrentGain BandwidthProduct @ IC = 1.0 Adc fT = 0.8 MHz (Min) NPN = 2.2 MHz (Min) PNP Safe Operating Area Rated to 60 V and 120 V, Respectively PbFree Packages are Available* 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS MAXIMUM RATINGS (Note 1) Rating CollectorEmitter Voltage 2N3055A MJ15015, MJ15016 CollectorBase Voltage 2N3055A MJ15015, MJ15016 CollectorEmitter Voltage Base Reversed Biased 2N3055A MJ15015, MJ15016 EmitterBase Voltage Collector Current Continuous Base Current Total Device Dissipation @ TC = 25_C Derate above 25_C 2N3055A Total Device Dissipation @ TC = 25_C Derate above 25_C MJ15015, MJ15016 Operating and Storage Junction Temperature Range TJ, Tstg VCEV 100 200 VEBO IC IB PD 7.0 15 7.0 115 0.65 180 1.03 65 to +200 _C 2N3055A = Device Code MJ1501x = Device Code x = 5 or 6 G = PbFree Package A = Assembly Location Y = Year WW = Work Week MEX = Country of Origin Vdc Adc Adc W W/_C 2N3055AG AYWW MEX MJ1501xG AYWW MEX VCBO 100 200 Vdc Symbol VC……
