器件名称:
2N1599
功能描述:
SILICON THYRISTOR(low-current silicon controlled rectifiers in a three-lead package ideal for printed-circuit)
文件大小:
94.84KB 共2页
简 介:
2N1595 thru 2N1599 SILICON THYRISTOR Industrial-type, low-current silicon controlled rectifiers in a three-lead package ideal for printed-circuit applications. Current handling capability of 1.6 amperes at junction temperetures to 125°C MAXIMUM RATINGS (*) TJ=125°C unless otherwise noted Symbol VRSM(REP) IT(RMS) ITSM PGM PG(AV) IGM VGFM VGRM TJ TSTG Ratings Peak reverse blocking voltage * Forward Current RMS (all conduction angles) Peak Surge Current (One Cycle, 60Hz, TJ=-65 to +125°C) Peak Gate Power – Forward Average Gate Power - Forward Peak Gate Current – Forward Peak Gate Voltage - Forward Peak Gate Voltage - Reverse Operating Range Junction Temperature 2N1595 2N1596 2N1597 2N1598 2N1599 50 100 200 1.6 15 0.1 0.01 0.1 300 400 V Amp Amp W W Amp 10 10 -65 to +125 V V °C Storage Temperature Range -65 to +150 ELECTRICAL CHARACTERISTICS TJ=25°C unless otherwise noted, RGK=1000 Symbol VDRM IRRM Ratings Peak Forward Blocking Min : Voltage * Peak Reverse Blocking Current (Rated VDRM, TJ =125°C) 2N1595 2N1596 2N1597 2N1598 2N1599 50 100 200 Max : 1.0 300 400 V mA COMSET SEMICONDUCTORS 1/2 2N1595 thru 2N1599 Symbol IDRM IGT Ratings Peak Forward Blocking Current (Rated VDRM with gate open , TJ =125°C) Gate Trigger Current (2) Anode Voltage=7.0 Vdc, RL=12 Gate Trigger Voltage Anode Voltage=7.0 Vdc, RL=12 VDRM = Rated, RL=100, TJ=125°C 2N1595 2N1596 2N1597 2N1598 2N1599 Max :1.0 Typ : 2.0 Max : 10 Typ : 0.7 Max : 3.0 Min : 0.2 Typ : 5.0 Typ……
