器件名称:
2N1616
功能描述:
NPN SILICON TRANSISTOR
文件大小:
22.45KB 共2页
简 介:
2N1616 MECHANICAL DATA Dimensions in mm (inches) 1 9 .0 5 (0 .7 5 0 ) m in . NPN SILICON TRANSISTOR 1 7 .2 7 (0 .6 8 0 ) 1 0 .1 6 (0 .4 0 0 ) ! Bipolar Power Transistor 1 5 .4 2 (0 .6 0 7 ) m a x . TO–61 Hermetic Package High Current Switching LF Large Signal Amplification 2 .7 9 4 (0 .1 1 0 ) 1 1 .1 7 6 (0 .4 4 0 ) 7 .6 2 (0 .3 0 0 ) 8 .8 9 (0 .3 5 0 ) 2 .2 8 6 (1 /4 ) U N F 2 A TO–61 Metal Package. Pin 1 – Emitter Pin 2 – Base Case – Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD TSTG , TJ Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Total Device Dissipation Derate above 100°C Storage and Operating Junction Temperature Range 60V 60V 8V 5A 85W 570 mW/°C –65 to +175°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5643 Issue 1 2N1616 Parameter ICBO Collector-Base cut-off current Tcase = 150°C Collector-Emitter cut-off current Test Conditions VCB = 60V ……
