器件名称:
2N1890
功能描述:
NPN LOW POWER SILICON TRANSISTOR
文件大小:
59.07KB 共3页
简 介:
TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/225 Devices 2N1711 2N1890 Qualified Level JAN JANTX MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCBO VEBO IC PT TJ, Tstg Symbol ZθJX 2N1711 75 2N1890 100 Unit Vdc Vdc mAdc W W 0 C Unit C/W @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range 7.0 500 0.8 3.0 -65 to +200 Max. 58 THERMAL CHARACTERISTICS Characteristics Thermal Impedance 1) Derate linearly 4.57 mW/0C for TA > 250C 2) Derate linearly 17.2 mW/0C for TC > 250C 0 TO-5* *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC = 100 Adc Collector-Emitter Breakdown Voltage RBE = 10 , IC = 100 mAdc Collector-Emitter Breakdown Voltage IC = 30 mAdc Emitter-Base Breakdown Voltage IE = 100 Adc Collector-Base Cutoff Current VCB = 60 Vdc VCB = 80 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc 2N1711, S 2N1890, S 2N1711, S 2N1890, S 2N1711, S 2N1890, S V(BR)CBO 75 100 50 80 30 60 7.0 10 10 5.0 Vdc V(BR)CER Vdc V(BR)CEO Vdc V(BR)EBO 2N1711 2N1890 ICBO IEBO Vdc ηAdc ηAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N1711, 2N1890 JAN SERIES Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 10 Adc……
