器件名称:
2N1893_03
功能描述:
SMALL SIGNAL NPN TRANSISTOR
文件大小:
313.3KB 共5页
简 介:
2N1893 SMALL SIGNAL NPN TRANSISTOR s GENERAL PURPOSE HIGH VOLTAGE DEVICE DESCRIPTION The 2N1893 is a Silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for use in high-performance amplifier, oscillator and switching circuits. It provides greater voltage swings in oscillator and amplifier circuits and more protection in inductive switching circuits due to its 120 V collector-to-base voltage rating. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CER V CEO V EBO IC P tot Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (R BE ≤ 10 ) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Total Dissipation at T amb ≤ 25 o C o at T C ≤ 25 C at T C ≤ 100 o C Storage Temperature Max. Operating Junction Temperature Value 120 100 80 7 0.5 0.8 3 1.7 -65 to 175 175 Unit V V V V A W W W o o T stg Tj C C January 2003 1/5 2N1893 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 50 187.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I EBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Collector-Base Breakdown Voltage (I E = 0) Test Conditions V CB = 90 V V CB = 90 V V EB = 5 V I C = 100 A 120 T C = 150 o C Min. Typ. Max. 10 15 10 Unit nA A nA V V (BR)CER Collector-Emitter Breakdown Voltage (R BE ≤ 10 ) V (BR)CEO Collector-……
