器件名称: 2N3421SJAN
功能描述: NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393
文件大小: 55.11KB 共2页
简 介:TECHNICAL DATA
NPN MEDUIM POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/393 Devices 2N3418 2N3814S 2N3419 2N3419S 2N3420 2N3420S 2N3421 2N3421S Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current tP ≤ 1.0 ms, duty cycle ≤ 50% Total Power Dissipation @ TA = +250C(1) @ TC = +1000C(2) Operating & Storage Temperature Range 1) Derate linearly 5.72 mW/0C for TA > 250C 2) Derate linearly 150 mW/0C for TC > 1000C
Symbol
VCEO VCBO VEBO IC PT Top, Tstg
2N3418, S 2N3420, S
60 85
2N3419, S 2N3421, S
80 125
Unit
Vdc Vdc Vdc Adc W W/0C 0 C
8.0 3.0 5.0 1.0 15 -65 to +200
TO- 5*
2N3418, 2N3419, 2N3420, 2N3421
TO-39* (TO205-AD)
2N3418S, 2N3419S, 2N3420S, 2N3421S *See Appendix A for Package Outline
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current IC = 50 mAdc, IB = 0 Collector-Emitter Cutoff Current VBE = -0.5 Vdc, VCE = 80 Vdc VBE = -0.5 Vdc, VCE = 120 Vdc Collector-Emitter Cutoff Current VCE = 45 Vdc, IB = 0 VCE = 60 Vdc, IB = 0 Emitter-Base Cutoff Current VEB = 6.0 Vdc, IC = 0 VEB = 8.0 Vdc, IC = 0 2N3418, S; 2N3420, S 2N3419, S; 2N3421, S 2N3418, S; 2N3420, S 2N3419, S; 2N3421, S 2N3418, S; 2N3420, S 2N3419, S; 2N3421, S V(BR)CEO ICEX 60 80 0.3 0.3 5.0 5.0 0.5 10 Vdc Adc
ICEO
Adc
IEBO
Adc
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2N3418, S……