器件名称:
BU103A
功能描述:
Silicon NPN Power Transistor
文件大小:
286.47KB 共2页
简 介:
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU103A DESCRIPTION Continuous Collector Current-IC= 1A Collector Power Dissipation: PC= 30W @TC= 25℃ APPLICATIONS Designed for TV vertical applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCER VEBO IC PC TJ Tstg PARAMETER Collector-Base Voltage VALUE 120 UNIT V Collector-Emitter Voltage RBE= 220Ω Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature w w PARAMETER s c s i . w 120 8 1 30 200 -65~200 n c . i m e V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c MAX 6.0 UNIT ℃/W Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CER VCE(sat)-1 ICBO IEBO hFE COB fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector Output Capacitance Current Gain-Bandwidth Product CONDITIONS IC= 100mA; RBE= 220Ω IC= 0.2A; IB= 20mA VCB= 80V; IE= 0 VEB= 5V; IC= 0 IC= 0.2A; VCE= 10V IE= 0; VCB= 10V; f= 1MHz IC= 0.1A; VCE= 10V 50 50 100 MIN 120 TYP. BU103A MAX UNIT V 1.0 0.1 0.1 200 V mA mA w w s c s i . w n c . i m e pF MHz isc Website：www.iscsemi.cn 2 ……
