器件名称: BU113
功能描述: Silicon NPN Power Transistors
文件大小: 204.23KB 共2页
简 介:INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
BU113
DESCRIPTION Collector-Emitter Voltage:VCEX(SUS) = 700V(Min.) Collector Current- IC= 10A
APPLICATIONS Designed for use in horizontal deflection output state of color TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Emitter Voltage
VCEX
Collector-Emitter Voltage VBE= -5V
VEBO
Emitter-Base Voltage
IC IB
B
Collector Current-Continuous
Base Current-Continuous
w
ww
s c s .i
700 700 10 10 4 30 150 -65~150
n c . i m e
V V V A A W ℃ ℃
PC
Collector Power Dissipation @TC= 90℃ Junction Temperature
Tj
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 2.0 UNIT ℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
BU113
MAX
UNIT
V(BR)EBO
Collector-Base Breakdown Voltage
IE= 30mA; IC= 0
10
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 10A; IB= 2A VCE= 250V; VBE= -5V VCE= 700V; VBE= -5V IC= 8A; VCE= 2V 7
3.0 2.0 10
V
ICEX
Collector Cutoff Current
mA
hFE
DC Current Gain
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 4V
6
MHz
COB
Collector Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
tf
Fall Time
w w
s c s i . w
IC= 8A; IB1= -IB2= 1.6A
n c . i m e
250
pF
1.0
μs
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