器件名称:
BUZ110S
功能描述:
SIPMOS Power Transistor
文件大小:
139.69KB 共8页
简 介:
BUZ 110S SIPMOS Power Transistor Features N channel Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 55 0.01 80 V A Enhancement mode Avalanche rated dv/dt rated 175 C operating temperature Type BUZ110S BUZ110S E3045A BUZ110S E3045 Package Ordering Code Packaging Pin 1 G Pin 2 D Pin 3 S P-TO220-3-1 Q67040-S4005-A2 Tube P-TO263-3-2 Q67040-S4005-A6 Tape and Reel P-TO263-3-2 Q67040-S4005-A5 Tube Maximum Ratings, at Tj = 25 C unless otherwise specified Parameter Continuous drain current Symbol Value 80 66 320 460 20 6 kV/s mJ Unit A ID TC = 25 C, limited by bond wire TC = 100C Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 C Avalanche energy, single pulse ID = 80 A, VDD = 25 V, RGS = 25 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS = 80 A, VDS = 40 V, di/dt = 200 A/s, Tjmax = 175 C Gate source voltage Power dissipation VGS Ptot T j , Tstg ±20 200 -55... +175 55/175/56 V W C TC = 25 C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Data Book 1 05.99 BUZ 110S Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area1) Symbol min. Values typ. max. 0.75 62 62 40 K/W Unit RthJC RthJA RthJA - Electrical Characteristics , at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain- ……
