器件名称:
2N3442
功能描述:
10 AMPERE POWER TRANSISTOR NPN SILICON 140 VOLTS 117 WATTS
文件大小:
135.65KB 共4页
简 介:
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3442/D High-Power Industrial Transistors NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. Collector –Emitter Sustaining Voltage — VCEO(sus) = 140 Vdc (Min) Excellent Second Breakdown Capability 2N3442 10 AMPERE POWER TRANSISTOR NPN SILICON 140 VOLTS 117 WATTS CASE 1–07 TO–204AA (TO–3) *MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB Value 140 160 7.0 Unit Vdc Vdc Vdc Adc Adc Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Collector Current — Peak Base Current — Continuous Peak 10 15** 7.0 — Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 117 0.67 Watts W/_C TJ, Tstg – 65 to + 200 _C THERMAL CHARACTERISTICS Characteristic Symbol RθJC Max 1.5 Unit Thermal Resistance, Junction to Case _C/W * Indicates JEDEC Registered Data. ** This data guaranteed in addition to JEDEC registered data. REV 7 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 2N3442 v ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise note……
