器件名称:
2N3498
功能描述:
NPN SILICON TRANSISTOR
文件大小:
69.36KB 共2页
简 介:
TECHNICAL DATA NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/366 Devices 2N3498 2N3498L 2N3499 2N3499L 2N3500 2N3500L 2N3501 2N3501L Qualified Level JAN JANTX JANTXV JANS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC PT TJ, Tstg Symbol RθJC 2N3498* 2N3499* 100 100 6.0 500 2N3500* 2N3501* 150 150 6.0 300 Unit Vdc Vdc Vdc mAdc W W 0 C Unit TO-5* 2N3498L, 2N3499L 2N3500L, 2N3501L @ TA = 250C (1) @ TC = 250C (2) Operating & Storage Junction Temp. Range 1.0 5.0 -55 to +200 Max. 35 THERMAL CHARACTERISTICS 0 C/W 175 Junction-to-Ambient RθJA *Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices 1) Derate linearly 5.71 W/0C for TA > 250C 2) Derate linearly 28.6 W/0C for TC > 250C Characteristics Thermal Resistance: Junction-to-Case TO-39* (TO-205AD) 2N3498, 2N3499 2N3500, 2N3501 *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Base Cutoff Current VCB = 50 Vdc VCB = 75 Vdc VCB = 100 Vdc VCB = 150 Vdc Emitter-Base Cutoff Current VEB = 4.0 Vdc VEB = 6.0 Vdc 2N3498, 2N3499 2N3500, 2N3501 2N3498, 2N3499 2N3500, 2N3501 2N3498, 2N3499 2N3500, 2N3501 V(BR)CEO 100 150 50 50 10 10 25 10 Vdc ICBO ηAdc ηAdc Adc Adc ηAdc Adc IEBO 6 Lake Street, Lawrence……
