器件名称:
2SA0683
功能描述:
Silicon PNP epitaxial planar type
文件大小:
99.15KB 共4页
简 介:
Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm ■ Features Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating 30 60 25 50 5 1 1.5 1 150 55 to +150 V A A W °C °C V Unit V 0.45+0.2 –0.1 (1.27) 13.5±0.5 0.7+0.3 –0.2 0.7±0.1 8.6±0.2 For low-frequency power amplification and driver amplification Complementary to 2SC1383, 2SC1384 5.9±0.2 4.9±0.2 0.45+0.2 –0.1 (1.27) 1 2 3 Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature 2.54±0.15 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) 2SA0683 2SA0684 2SA0683 2SA0684 VEBO ICBO hFE1 *2 hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) VBE(sat) fT Cob IE = 10 A, IC = 0 VCB = 20 V, IE = 0 VCE = 10 V, IC = 500 mA VCE = 5 V, IC = 1 A IC = 500 mA, IB = 50 mA IC = 500 mA, IB = 50 mA VCB = 10 V, IE = 50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 85 50 0.2 0.85 200 20 30 0.4 1.20 V V MHz pF VCEO IC = 2 mA, IB = 0 Symbol VCBO Conditions IC = 10 A, IE = 0 Min 30 60 25 50 5 0.1 340 V A V Typ Max Unit V Emitter-base voltage (Collector open) Collector-base cut……
