器件名称:
2SA0720A
功能描述:
For low-frequency driver amplification Complementary
文件大小:
72.14KB 共3页
简 介:
Transistors 2SA0720A (2SA720A) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC1318A ■ Features High collector-emitter voltage (Base open) VCEO Optimum for the driver stage of a low-frequency and 25 W to 30 W output amplifier 0.7±0.1 Unit: mm 5.0±0.2 4.0±0.2 0.7±0.2 12.9±0.5 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 80 70 5 0.5 1 625 150 55 to +150 Unit V V 2.3±0.2 0.45+0.15 –0.1 2.5+0.6 –0.2 1 2 3 5.1±0.2 0.45+0.15 –0.1 2.5+0.6 –0.2 V A A mW °C °C 1: Emitter 2: Collector 3: Base EIAJ: SC-43A TO-92-B1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio *1 Collector-emitter saturation voltage *1 Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) *1 Symbol VCBO VCEO VEBO ICBO hFE1 *2 hFE2 VCE(sat) VBE(sat) fT Cob Conditions IC = 10 A, IE = 0 IC = 2 mA, IB = 0 IE = 10 A, IC = 0 VCB = 20 V, IE = 0 VCE = 10 V, IC = 150 mA VCE = 10 V, IC = 500 mA IC = 300 mA, IB = 30 mA IC = 300 mA, IB = 30 ……
