器件名称:
2SA0777
功能描述:
For low-frequency driver amplification Complementary
文件大小:
81.42KB 共4页
简 介:
Transistors 2SA0777 (2SA777) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC1509 ■ Features High collector-emitter voltage (Base open) VCEO Optimum for the driver stage of a low-frequency and 25 W to 30 W output amplifier. 0.7±0.1 Unit: mm 5.9±0.2 4.9±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 80 80 5 0.5 1 1 150 55 to +150 Unit V V V A A W °C °C 1 2 3 0.45+0.2 –0.1 (1.27) 13.5±0.5 0.45+0.2 –0.1 (1.27) 0.7+0.3 –0.2 8.6±0.2 2.54±0.15 1 : Emitter 2 : Collector 3 : Base EIAJ : SC-51 TO-92L-A1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio *1 Symbol VCBO VCEO VEBO ICBO hFE1 *2 hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) VBE(sat) fT Cob Conditions IC = 10 A, IE = 0 IC = 100 A, IB = 0 IE = 1 A, IC = 0 VCB = 20 V, IE = 0 VCE = 10 V, IC = 150 mA VCE = 5 V, IC = 500 mA IC = 500 mA, IB = 50 mA IC = 500 mA, IB = 50 mA VCB = 10 V, I……
