器件名称:
2SA0900
功能描述:
For low-frequency Power amplification Complementary
文件大小:
71.7KB 共3页
简 介:
Power Transistors 2SA0900 (2SA900) Silicon PNP epitaxial planar type Unit: mm For low-frequency Power amplification Complementary to 2SC1868 ■ Features Low collector-emitter saturation voltage VCE(sat) TO-126B package which requires no insulation plate for installation to the heat sink 8.0+0.5 –0.1 φ 3.16±0.1 3.8±0.3 11.0±0.5 3.2±0.2 1.9±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 20 18 5 1 2 1.2 150 55 to +150 Unit V V V A A W °C °C 1 2 0.75±0.1 4.6±0.2 0.5±0.1 0.5±0.1 2.3±0.2 3 1.76±0.1 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio Symbol VCBO VCEO VEBO ICBO ICEO hFE1 * hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) VBE(sat) fT Cob Conditions IC = 10 A, IE = 0 IC = 1 mA, IB = 0 IE = 10 A, IC = 0 VCB = 10 V, IE = 0 VCE = 18 V, IB = 0 VCE = 2 V, IC = 500 mA VCE = 2 V, IC = 1.5 A IC = 1 A, IB = 50 mA IC = 500 mA, IB = 50 mA VCB = 6 V, I……
