器件名称:
2SA0921
功能描述:
For high breakdown voltage low-noise amplification Complementary
文件大小:
71.32KB 共3页
简 介:
Transistors 2SA0921 (2SA921) Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC1980 ■ Features 0.7±0.1 0.7±0.2 Unit: mm 5.0±0.2 5.1±0.2 4.0±0.2 High collector-emitter voltage (Base open) VCEO Low noise voltage NV ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 120 120 5 20 50 250 150 55 to +150 Unit V V 1 2 3 2.3±0.2 12.9±0.5 0.45+0.15 –0.1 2.5+0.6 –0.2 2.5+0.6 –0.2 0.45+0.15 –0.1 V mA mA mW °C °C 1: Emitter 2: Collector 3: Base TO-92-B1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio * Collector-emitter saturation voltage Transition frequency Noise voltage Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT NV Conditions IC = 10 A, IE = 0 IC = 1 mA, IB = 0 IE = 10 A, IC = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VCE = 5 V, IC = 2 mA IC = 20 mA, IB = 2 mA VCB = 5 V, IE = 2 mA, f = 200 MHz VCE = 40 V, IC = 1 mA, GV = 80 dB Rg = 100 k, Function = FLAT 200 150 180 Min 120 120 5 100 1 700 0.6 Typ Max Unit V……
