器件名称:
2SA0963
功能描述:
For low-frequency power amplification
文件大小:
80.5KB 共4页
简 介:
Power Transistors 2SA0963 (2SA963) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC2209 120° Unit: mm 7.5+0.5 –0.1 2.9±0.2 2.3±0.2 3.8±0.3 1.9±0.1 Large collector power dissipation PC Output of 4 W to 5 W can be obtained by a complementary pair with 2SC2209 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation * Junction temperature Storage temperature Note) *: TC = 25°C Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 50 40 5 1.5 3 10 150 55 to +150 Unit V V V A A W °C °C 1 2 0.75±0.1 4.6±0.2 0.5±0.1 16.0±1.0 0.5±0.1 2.3±0.2 3 1.26±0.1 1: Emitter 2: Collector 3: Base TO-126A-A1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio * Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT Cob Conditions IC = 1 mA, IE = 0 IC = 2 mA, IB = 0 VCB = 20 V, IE = 0 VCE = 10 V, IB = 0 VEB = 5 V, IC = 0 VCE = 5 V, IC = 1 A IC = 1.5 A, IB = 0.15 A IC = 2 A, IB = 0.2 A VCB = 5 V, IE = 0.5 A, f = 200 MHz VCB = 5 V, IE = 0, f = 1 MHz Min 50 40 Typ Max 3.05±0.1 ■ Features 11.0±0.5 Unit V V 1 100 10 80 220……
