器件名称:
2SA1008
功能描述:
SILICON POWER TRANSISTOR
文件大小:
109.67KB 共6页
简 介:
DATA SHEET SILICON POWER TRANSISTOR 2SA1008 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1008 is a mold power transistor developed for high-speed switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers. ORDERING INFORMATION Part No. 2SA1008 Package TO-220AB FEATURES Low collector saturation voltage Fast switching speed Complementary transistor: 2SC2331 (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT Tj Tstg TC = 25°C TA = 25°C PW ≤ 300 s, duty cycle ≤ 10% Conditions Ratings 100 100 7.0 2.0 4.0 1.0 15 1.5 150 55 to +150 Unit V V V A A A W W °C °C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14866EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan 2002 2SA1008 ELECTRICAL CHARACTERISTICS (TA = 25°C) Parameter Collector to emitter voltage Collector to emitter voltage Collector to emitter voltage Collector cutoff current Collec……
