器件名称:
2SA1018
功能描述:
Silicon NPN triple diffusion planer type
文件大小:
47.5KB 共3页
简 介:
Transistor 2SC1473, 2SC1473A Silicon NPN triple diffusion planer type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm 5.0±0.2 4.0±0.2 s Features q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SC1473 2SC1473A 2SC1473 VCEO VEBO ICP IC PC Tj Tstg Symbol VCBO (Ta=25C) Ratings 250 300 200 300 7 100 70 750 150 –55 ~ +150 Unit V 0.45 –0.1 1.27 +0.2 13.5±0.5 High collector to emitter voltage VCEO. High transition frequency fT. 5.1±0.2 0.45 –0.1 1.27 +0.2 emitter voltage 2SC1473A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW C C 2.3±0.2 1 2 3 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage 2SC1473 2SC1473A 2SC1473 2SC1473A (Ta=25C) Symbol ICEO VCEO VEBO hFE* VCE(sat) fT Cob Conditions VCE = 120V, IB = 0 VCE = 120V, IB = 0 IC = 100A, IC = 0 IE = 1A, IC = 0 VCE = 10V, IC = 5mA IC = 50mA, IB = 5mA VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 50 80 10 200 300 7 30 220 1.2 V MHz pF min typ max 1 1 Unit A V V Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance *h FE Rank classification P 30 ~ 100 Q 60 ~ 150 R 100 ~ 220 hFE Rank 1 Transistor PC — Ta 1.0 120 2SC1473,……
