器件名称:
M36L0R7060B1
功能描述:
128 Mbit (Multiple Bank, Multilevel, Burst) Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package
文件大小:
445.41KB 共22页
简 介:
M36L0R7060T1 M36L0R7060B1 128 Mbit (Multiple Bank, Multilevel, Burst) Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package Features ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash memory – 1 die of 64 Mbit (4 Mb x16) Pseudo SRAM Supply voltage – VDDF = VCCP = VDDQF = 1.7 to 1.95 V – VPPF = 9 V for fast program Electronic signature – Manufacturer Code: 20h – Top Device Code M36L0R7060T1: 88C4h – Bottom Device Code M36L0R7060B1: 88C5h Package – ECOPACK FBGA ■ ■ TFBGA88 (ZAQ) 8 x 10 mm ■ ■ Security – 64 bit unique device number – 2112 bit user programmable OTP Cells Block locking – All blocks locked at power-up – Any combination of blocks can be locked with zero latency – WPF for Block Lock-Down – Absolute Write Protection with VPPF = VSS ■ Flash memory ■ Synchronous / Asynchronous Read – Synchronous Burst Read mode: 54 MHz, 66 MHz – Random Access: 70 ns, 85 ns Synchronous Burst Read Suspend Programming time – 2.5 s typical word program time using Buffer Enhanced Factory Program command Memory organization – Multiple Bank memory array: 8 Mbit banks – Parameter Blocks (top or bottom location) Common Flash Interface (CFI) 100 000 program/erase cycles per block Dual operations – program/erase in one Bank while read in others – No delay between read and write operations ■ ■ ■ ■ ■ PSRAM Access time: 70 ns Asynchronous Page Read – Page Size: 4, 8 or 16 words – Subsequent read within page: 20 ns Low power featur……
