器件名称:
M36P0R8070E0
功能描述:
256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package
文件大小:
638.18KB 共22页
简 介:
M36P0R8070E0 256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package Features ■ Multichip package – 1 die of 256 Mbit (16 Mb x 16, multiple bank, multilevel, burst) Flash memory – 1 die of 128 Mbit (8 Mb x16) PSRAM Supply voltage – VDDF = VCCP = VDDQ = 1.7 to 1.95 V – VPPF = 9 V for fast program (12 V tolerant) Electronic signature – Manufacturer code: 20h – Device code: 8818 Package – ECOPACK Synchronous/asynchronous read – Synchronous burst read mode: 108 MHz, 66 MHz – Asynchronous page read mode – Random access: 93 ns Programming time – 4 s typical Word program time using Buffer Enhanced Factory Program command Memory organization – Multiple bank memory array: 32 Mbit banks – Four EFA (extended flash array) blocks of 64 Kbits Dual operations – Program/erase in one bank while read in others – No delay between read and write operations Security – 64bit unique device number – 2112 bit user programmable OTP Cells 100 000 program/erase cycles per block ■ FBGA ■ TFBGA107 (ZAC) ■ ■ Flash memory ■ Block locking – All blocks locked at power-up – Any combination of blocks can be locked with zero latency – WPF for block lock-down – Absolute write protection with VPPF = VSS CFI (common Flash interface) Access time: 70 ns Asynchronous page read – Page size: 4, 8 or 16 words – Subsequent read within page: 20 ns Synchronous burst read/write Low power consumption – Active current: < 25 mA – Standby current: 200 A – Deep……
