器件名称:
2SC1047
功能描述:
Silicon NPN epitaxial planer type(For high-frequency amplification)
文件大小:
56.97KB 共3页
简 介:
Transistor 2SC1047 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 5.0±0.2 4.0±0.2 s Features q q Optimum for RF amplification of FM/AM radios. High transition frequency fT. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg (Ta=25C) Ratings 30 20 3 20 400 150 –55 ~ +150 Unit V V V mA mW C C 2.54±0.15 1 2 3 0.45 –0.1 1.27 +0.2 13.5±0.5 5.1±0.2 0.45 –0.1 1.27 +0.2 2.3±0.2 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A s Electrical Characteristics Parameter Collector to base voltage Emitter to base voltage Forward current transfer ratio Base to emitter voltage Common emitter reverse transfer capacitance Transition frequency Power gain Noise figure (Ta=25C) Symbol VCBO VEBO hFE Cre fT PG NF * Conditions IC = 10A, IE = 0 IE = 10A, IC = 0 VCB = 6V, IE = –1mA VCB = 6V, IE = –1mA VCE = 6V, IC = 1mA, f = 10.7MHz VCB = 6V, IE = –1mA, f = 200MHz VCB = 6V, IE = –1mA, f = 100MHz VCB = 6V, IE = –1mA, f = 100MHz min 30 3 40 typ max Unit V V 260 0.72 0.8 1 V pF MHz dB 3.3 5 dB VBE 450 20 650 *h FE Rank classification B 40 ~ 110 C 65 ~ 160 D 100 ~ 260 hFE Rank 1 Transistor PC — Ta 500 12 Ta=25C 450 10 IB=100A 10 2SC1047 IC — VCE 12 Ta=25C IC — I B Collector power dissipation PC (mW) Collector current IC (mA) 350 300 250 200 150 100 50 0 0 2……
