器件名称:
2SA1022
功能描述:
Silicon PNP epitaxial planer type
文件大小:
38.25KB 共2页
简 介:
Transistor 2SA1022 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC2295 Unit: mm s q q 2.8 –0.3 +0.2 Features High transition frequency fT. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25C) 0.65±0.15 +0.25 1.5 –0.05 0.65±0.15 0.95 2.9 –0.05 1 1.9±0.2 +0.2 0.95 3 0.4 –0.05 +0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2 1.45 +0.2 1.1 –0.1 Ratings –30 –20 –5 –30 200 150 –55 ~ +150 Unit V V V mA mW C C 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise figure Reverse transfer impedance Common emitter reverse transfer capacitance (Ta=25C) Symbol ICBO ICEO IEBO hFE* VCE(sat) VBE fT NF Zrb Cre Conditions VCB = –10V, IE = 0 VCE = –20V, IB = 0 VEB = –5V, IC = 0 VCE = –10V, IC = –1mA IC = –10mA, IB = –1mA VCE = –10V, IC = –1mA VCB = –10V, IE = 1mA, f = 200MHz VCB = –10V, IE = 1mA, f = 5MHz VCB = –10V, IE = 1mA, f = 2MHz VCE = –10V, IC = –1mA f = 10.7MHz 150 70 – 0.1 – 0.7 300 2.8 22 1.2 min typ ……
