器件名称:
2SA1029
功能描述:
Silicon PNP Epitaxial
文件大小:
166.33KB 共6页
简 介:
2SA1029, 2SA1030 Silicon PNP Epitaxial REJ03G0633-0300 (Previous ADE-208-1004A) Rev.3.00 Aug.10.2005 Application Low frequency amplifier Complementary pair with 2SC458 and 2SC2308 Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SA1029 –30 –30 –5 –100 100 300 150 –55 to +150 2SA1030 –55 –50 –5 –100 100 300 150 –55 to +150 Unit V V V mA mA mW °C °C Rev.3.00 Aug 10, 2005 page 1 of 5 2SA1029, 2SA1030 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current trnsfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE*1 VBE VCE(sat) fT 2SA1029 Min Typ Max –30 — — –30 –5 — — 100 — — 200 — — — — — — — 280 — — –0.5 –0.5 500 –0.8 –0.2 — 2SA1030 Min Typ Max –55 — — –50 –5 — — 100 — — 200 — — — — — — — 280 3.3 — — –0.5 –0.5 320 –0.8 –0.2 — 4.0 Unit V V V A A Test conditions IC = –10 A, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 A, IC = 0 VCB = –18 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, IC = –2 mA V V MHz pF VCE = –12 V, IC = –……
