器件名称:
MAC5104CE
功能描述:
RADIATION HARD 4096 x 1 BIT STATIC RAM
文件大小:
262.01KB 共12页
简 介:
Obsolescence Notice This product is obsolete. This information is available for your convenience only. For more information on Zarlink’s obsolete products and replacement product lists, please visit http://products.zarlink.com/obsolete_products/ APRIL 1995 MA5104 DS3580-3.2 MA5104 RADIATION HARD 4096 x 1 BIT STATIC RAM The MA5104 4k Static RAM is configured as 4096 x 1 bits and manufactured using CMOS-SOS high performance, radiation hard, 3m technology. The device has separate input and output terminals controlled by Chip Select and Write Enable. The design uses a 6 transistor cell and has full static operation with no clock or timing strobe required. Address input buffers are deselected when Chip Select is in the HIGH state. Operation Mode Read Write Standby CS L L H WE H L X I/O D OUT D IN High Z ISB2 Power ISB1 FEATURES s 3m CMOS-SOS Technology s Latch-up Free s Fast Access Time 90ns Typical s Total Dose 106 Rad(Si) s Transient Upset >1010 Rad(Si)/sec s SEU <10-10 Errors/bitday s Single 5V Supply s Three State Output s Low Standby Current 10A Typical s -55°C to +125°C Operation s All Inputs and Outputs Fully TTL or CMOS Compatible s Fully Static Operation Figure 1: Truth Table Figure 2: Block Diagram 1 MA5104 CHARACTERISTICS AND RATINGS Symbol VCC VI TA TS Parameter Supply Voltage Input Voltage Operating Temperature Storage Temperature Min. -0.5 -0.3 -55 -65 Max. 7 VDD+0.3 125 150 Units V V °C °C Stresses above those listed may cause permanent damage to the devi……
