器件名称:
2SC1505
功能描述:
Silicon Power Transistor
文件大小:
52.03KB 共8页
简 介:
Silicon Power Transistor 2SC1505 NPN 2SC1505 (1.5 W) 2SC1505 TO-220AB VCBO = 300 V Cob = 4.5 pF MAX. (TO-220AB) TA = 25°C – – – VCBO VCEO VEBO IC PT TA = 25°C TC = 25°C Tj Tstg 300 300 7.0 200 1.2 15 150 –55 +150 V V V mA W W °C °C ( D14860JJ3V0DS00 TC-5084B October 2000 NS 3 CP(K) 1982, 2000 2SC1505 TA = 25°C MIN. ICBO IEBO hFE VCE(sat) fT Cob VCB = 200 V, IE = 0 A VEB = 5.0 V, IC = 0 A VCE = 10 V, IC = 10 mA IC = 50 mA, IB = 5.0 mA VCE = 30 V, IE = –10 mA 50 80 4.5 40 80 TYP . MAX. 100 100 200 2.0 V MHz pF nA nA VCB = 50 V, IE = 0 A, f = 1.0 MHz PW 350 s, Duty Cycle 2% hFE M hFE 40 80 60 L 120 100 K 200 2 D14860JJ3V0DS00 2SC1505 TA = 25°C TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2 mm TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 16 14 1.2 PT (W) 100 TA (C) 150 PT (W) 12 10 8 6 4 2 0 0 50 50 25 1.0 0.8 0.6 0.4 0.2 0 0 50 100 TA (C) 150 50 10 0c m2 0c m2 cm 2 cm 2 m2 10 c COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 200 VCE = 5 V IC (mA) 200 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 10 mA 9.0 mA 8.0 mA 7.0 mA 6.0 mA 5.0 mA IC (mA) 160 160 mA 4.0 A 3.0 m A 2.0 m IB = 1.0 mA 120 120 80 80 40 40 0 0 0 0.4 0.6 0.8 VBE (V) 1.0 0 2 4 6 8 10 12 14 16 VCE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 16 14 IC (mA) 160 A 140 A 120 A 100 A 80 A DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 VCE = 10 V hFE 12 10 8 6 4 IB = 20 A 100 TA = 125C 75C 25C 25C 40 A 60 A 10 2 0 1 0 50 100 150 20……
