器件名称:
2SC1509
功能描述:
Silicon NPN epitaxial planer type(For low-frequency driver amplification)
文件大小:
47.09KB 共3页
简 介:
Transistor 2SC1509 Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SA777 5.9± 0.2 Unit: mm 4.9± 0.2 q q 2.54± 0.15 (Ta=25C) Ratings 80 80 5 1 0.5 1 150 –55 ~ +150 Unit V V V A A W C C 0.45–0.1 1.27 +0.2 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 13.5± 0.5 s Absolute Maximum Ratings 0.7–0.2 +0.3 High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.7± 0.1 8.6± 0.2 s Features 0.45–0.1 1.27 +0.2 s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol ICBO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = 20V, IE = 0 IC = 10A, IE = 0 IC = 100A, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 150mA*2 VCE = 5V, IC = 500mA*2 IC = 300mA, IB = 30mA*2 IC = 300mA, IB = 30mA*2 VCB = 10V, IE = –50mA, f = 100MHz VCB = 10V, IE = 0, f = 1MHz 80 80 5 130 50 100 0.2 0.85 120 11 *2 min 3.2 1 2 3 1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package typ max 0.1 Unit A V V V 330 0.4 1.2 V V MHz 20 ……