器件名称:
2SA1096
功能描述:
Silicon NPN epitaxial planar type(For low-frequency power amplification)
文件大小:
70.03KB 共4页
简 介:
Power Transistors 2SC2497, 2SC2497A Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SA1096 and 2SA1096A I Features High collector to emitter voltage VCEO TO-126B package which requires no insulation plate for installation to the heat sink 8.0+0.5 –0.1 φ 3.16±0.1 3.8±0.3 11.0±0.5 3.2±0.2 1.9±0.1 I Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage 2SC2497 2SC2497A VEBO ICP IC PC Tj Tstg Symbol VCBO VCEO Rating 70 50 60 5 3 1.5 1.2 *1 5 *2 Junction temperature Storage temperature 150 55 to +150 °C °C V A A W Unit V V 1 2 0.75±0.1 4.6±0.2 0.5±0.1 0.5±0.1 2.3±0.2 3 1.76±0.1 16.0±1.0 Emitter to base voltage Peak collector current Collector current Collector power dissipation 1 : Emitter 2 : Collector 3 : Base TO-126B-A1 Package Note) *1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink I Electrical Characteristics TC = 25°C Parameter Collector cutoff current Symbol ICBO ICEO Emitter cutoff current Collector to base voltage Collector to emitter voltage 2SC2497 2SC2497A hFE VCE(sat) VBE(sat) fT Cob VCE = 5 V, IC = 1 A IC = 1.5 A, IB = 0.15 A IC = 1.5 A, IB = 0.15 A VCB = 5 V, IE = 0.5 A, f = 200 MHz VCB = 20 V, IE = 0, f = 1 MHz 150 35 IEBO VCBO VCEO Conditions VCB = 20 V, IE = 0 VCE = 10 V, IB = 0 VEB = 5 V, IC = 0 IC = 1 mA, IE = 0 IC = 2 mA, IB = 0 70 50 60 80 220 1 1.5 V V MHz pF Min Typ Max 1 100 10 Unit A A A V V Forward current transfer ratio * Collecto……
