器件名称:
2SC1568
功能描述:
Silicon NPN epitaxial planar type
文件大小:
94.57KB 共4页
简 介:
Power Transistors 2SC1568 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Complementary to 2SA0900 φ 3.16±0.1 8.0+0.5 –0.1 Unit: mm 3.2±0.2 3.8±0.3 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 18 18 5 1 2 1.2 150 55 to +150 Unit V V V A A W °C °C 0.75±0.1 4.6±0.2 0.5±0.1 0.5±0.1 2.3±0.2 3 1.76±0.1 1 2 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio Symbol VCBO VCEO VEBO ICBO ICEO hFE1 * Conditions IC = 10 A, IE = 0 IC = 1 mA, IB = 0 IE = 10 A, IC = 0 VCB = 10 V, IE = 0 VCE = 18 V, IB = 0 VCE = 2 V, IC = 500 mA VCE = 2 V, IC = 1.5 A IC = 1 A, IB = 50 mA IC = 500 mA, IB = 50 mA VCB = 6 V, IE = 50 mA, f = 200 MHz VCB = 6 V, IE = 0, f = 1 MHz Min 18 18 5 Typ 16.0±1.0 Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances and high efficiency with a lowvoltage power supply TO-126B package which incorporates a unique construction enabling installation to the heat sink without using insulati……
