器件名称:
FDS4141_F085
功能描述:
P-Channel PowerTrench MOSFET -40V, -10.8A, 19.0m
文件大小:
257.33KB 共7页
简 介:
FDS4141_F085 P-Channel PowerTrench MOSFET May 2009 FDS4141_F085 P-Channel PowerTrench MOSFET -40V, -10.8A, 19.0m Features Typ rDS(on) = 10.5m at VGS = -10V, ID = -10.5A Typ rDS(on) = 14.8m at VGS = -4.5V, ID = -8.4A Typ Qg(TOT) = 35nC at VGS = -10V High performance trench technology for extremely low rDS(on) RoHS Compliant Qualified to AEC Q101 Applications Control switch in synchronous & non-synchronous buck Load switch Inverter D D D D D D SO-8 S Pin 1 S G S D 8 1 S 6 7 3 2 S S D 5 4 G 2009 Fairchild Semiconductor Corporation FDS4141_F085 Rev. A 1 www.fairchildsemi.com FDS4141_F085 P-Channel PowerTrench MOSFET MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS Drain to Source Voltage VGS ID EAS PD Gate to Source Voltage Drain Current Continuous (VGS = 10V) Pulsed Single Pulse Avalanche Energy Power Dissipation Parameter Ratings -40 ±20 -10.8 -36 229 1.6 -55 to +150 Units V V A mJ W oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC RθJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient SO-8, 1in2 copper pad area 30 81 o C/W oC/W Package Marking and Ordering Information Device Marking FDS4141 Device FDS4141_F085 Package SO-8 Reel Size 13” Tape Width 12mm Quantity 2500 units Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current……
