器件名称:
2SA1121
功能描述:
Silicon PNP Epitaxial
文件大小:
65.06KB 共5页
简 介:
2SA1121 Silicon PNP Epitaxial REJ03G0636-0200 (Previous ADE-208-1008) Rev.2.00 Aug.10.2005 Application Low frequency amplifier Complementary pair with 2SC2618 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings –35 –35 –4 –500 150 150 –55 to +150 Unit V V V mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 4 2SA1121 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO VCE(sat) hFE*1 hFE Min –35 –35 –4 — — 100 10 Typ — — — — –0.2 — — –0.64 Max — — — –0.5 –0.6 320 — — Unit V V V A V Test conditions IC = –10 A, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 A, IC = 0 VCB = –20 V, IE = 0 IC = –150 mA, IB = –15 mA VCE = –3 V, IC = –10 mA VCE = –3 V, IC = –500 mA (Pulse test) VCE = –3 V, IC = –10 mA Base to emitter voltage VBE — Note: 1. The 2SA1121 is grouped by hFE as follows. Grade C D Mark SC SD hFE 100 to 200 160 to 320 V Rev.2.00 Aug 10, 2005 page 2 of 4 2SA1121 Main Characteristics Maximum Collector Dissipation Curve Collector power dissipation Pc (mW) 15……
