器件名称:
2SA1122CCTL-E
功能描述:
Silicon PNP Epitaxial
文件大小:
164.09KB 共5页
简 介:
2SA1122 Silicon PNP Epitaxial REJ03G0637-0200 (Previous ADE-208-1009) Rev.2.00 Aug.10.2005 Application Low frequency amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings –55 –55 –5 –100 150 150 –55 to +150 Unit V V V mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 4 2SA1122 Electrical Characteristics (Ta = 25°C) Item Symbol Collector to base breakdown voltage V(BR)CBO Collector to emitter breakdown voltage V(BR)CEO Emitter to base breakdown voltage V(BR)EBO Collector cutoff current ICBO Emitter cutoff current IEBO DC current transfer ratio hFE*1 Collector to emitter saturation voltage VCE(sat) Base to emitter voltage VBE Note: 1. The 2SA1122 is grouped by hFE as follows. Grade C D Mark CC CD hFE 160 to 320 250 to 500 Min –55 –55 –5 — — 160 — — Typ — — — — — — — — Max — — — –0.5 –0.5 500 –0.5 –0.75 Unit V V V A A V V Test conditions IC = –10 A, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 A, IC = 0 VCB = –30 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, IC = –2 mA IC = –10 mA, IB = –1 mA VCE = –12 V, IC = –2 mA Rev.2.00 Aug 10, 2005 page 2 of 4 2SA1122 Main Characteristics Maximum Collector Dissipation Curve Typical Output Characteristics –10 –30 –25 –20 Collector power dissip……